ROHM Semiconductor has launched its new SiC (Silicon Carbid) power module BSM180D12P3C007 rated at 1200V/180A. Based on ROHM’s completely inhouse supply chain capacities and advanced packaging capabilities, the Half-Bridge SiC module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint like previous modules.
ROHM has pioneered commercial power modules equipped with SiC-MOSFETs and SiC-SBDs and was able to successfully mass-produce the industry’s first trench-type SiC MOSFETs by utilizing a proprietary structure, ensuring long-term reliability. The new module implements MOSFETs with their advanced UMOS structure going without JFET region and maximizing SiC characteristics. It provides the lowest drain source resistance together with high speed switching performance, and – thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs – it has almost no recovery loss Err.
As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower Switching loss than planar SiC Modules utilizing a 2nd Gen SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components which in consequence paves the way to greater energy savings and end-product miniaturization.
For further information please contact http://www.rohm.com/eu
